| 摘要 |
A semiconductor processing device is provided which includes a nonvolatile memory unit, a voltage generating unit, and a first terminal. The voltage generating unit generates a first voltage generated from an operation voltage provided from outside of the semiconductor processing device and provides the first voltage to the nonvolatile memory unit for storing data therein. The first terminal provides the first voltage generated by the voltage generating unit to outside of the semiconductor processing device. This first voltage provided to outside of the semiconductor processing device via the first terminal permits checking a voltage level of the first voltage and correcting this voltage level.
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