发明名称 System for removal of a spacer
摘要 The present disclosure provides a system for removing a spacer, such as associated with a processing operation using a lightly doped drain (LDD) region. In one example, the system includes means for creating a spacer, means for implanting a first relatively heavily doped region with the spacer in place, one or more chambers for removing the spacer, and means for implanting the LDD region with the spacer removed. The one or more chambers may be configured for applying a first dry removal process to remove the layer on the spacer utilizing a fluorine-contained plasma and applying a second wet etch process to remove the spacer.
申请公布号 US7235153(B2) 申请公布日期 2007.06.26
申请号 US20040894199 申请日期 2004.07.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHIU HSIEN-KUANG;WANG CHIH-HAO
分类号 H01L21/336;H01L21/311;H01L29/78 主分类号 H01L21/336
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