发明名称 |
Method for providing memory cells capable of allowing multiple variations of metal level assignments for bitlines and wordlines |
摘要 |
A method for providing memory cells that allow multiple variations of metal level assignments for bitlines and wordlines is disclosed. A memory cell includes two cell elements. The first and second cell elements are identically processed up to a metal-1 layer. The first cell element is subsequently processed with bitlines on a metal-2 layer and wordlines on a metal-3 layer. Next, the second cell element is processed with bitlines on the metal-3 layer and wordlines on the metal-2 layer.
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申请公布号 |
US7237215(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20040904226 |
申请日期 |
2004.10.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MOLDOVAN ADAM G.;OPPOLD JEFFERY H.;PAI NEELESH GOVINDARAYA |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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