摘要 |
An integrated circuit ( 10 ) having non-volatile memory (NVM) ( 14 ) includes a threshold selector ( 28 ) which selects a first one of a plurality of read current/voltage thresholds during a first portion of a program/erase cycle, and which selects a second one of a plurality of read current/voltage thresholds during a second portion of said program/erase cycle, wherein the first one of a plurality of read current/voltage thresholds and the second one of a plurality of read current/voltage thresholds are different. The first portion of the program/erase cycle occurs in time before the second portion of the program/erase cycle. The second one of the plurality of read current/voltage thresholds is less than the first one of the plurality of read current/voltage thresholds.
|