| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to reduce an expensive photolithography procedure for use in forming an align key by commonly using a photoresist pattern. A protective layer(110) is formed on a semiconductor substrate(100). A sacrificial layer(120) is formed on the protective layer. The sacrificial layer has etching selectivity with respect to the protective layer. A part of the sacrificial layer is selectively etched to form an align key(140). An aligned well(220) is formed on the semiconductor substrate by using the align key. An aligned isolation layer is formed on the semiconductor substrate where the well is formed by using the align key. Before the protective layer is formed, a different disaligned well(210) is formed on the semiconductor substrate. The different well surrounds the well.</p> |
