Semiconductor device and process for manufacturing the same

摘要

The present invention provides a semiconductor device comprising: a semiconductor layer ( 3 ); a gate electrode ( 11 ) formed on the semiconductor layer ( 3 ) via a gate insulation film ( 10 ); and a first insulation film ( 13 ) formed at one or more of sidewalls of the semiconductor layer ( 3 ), the gate insulation film ( 10 ) and the gate electrode ( 11 ); wherein the first insulation film ( 13 ) overlies a part of the gate insulation film ( 10 ) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.