发明名称 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same |
摘要 |
In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. A wiring layer is buried into the wiring pattern groove with a barrier metal film interposed therebetween. The barrier metal film is selectively removed from each sidewall portion of the wiring pattern groove. In other words, the barrier metal film is left only on the bottom of the wiring pattern groove. Thus, a damascene wiring layer having a hollow section whose dielectric constant is low between each sidewall of the wiring pattern groove and each side of the wiring layer can be formed in the semiconductor device.
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申请公布号 |
US7235882(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20050121976 |
申请日期 |
2005.05.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NITTA HIROYUKI;FUKUZUMI YOSHIAKI;KOHYAMA YUSUKE |
分类号 |
H01L23/52;H01L21/3213;H01L21/60;H01L21/768;H01L21/8242;H01L23/34;H01L23/522;H01L23/532;H01L27/108 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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