METHOD OF CORRECTION A CRITICAL DIMENSION IN A PHOTO MASK AND A THE PHOTO MASK CORRECTED THE CRITICAL DIMENSION USING THE SAME

摘要

A method for correcting the CD(Critical Dimension) of a photomask and the photomask are provided to prevent a photomask substrate from being etched and to reduce the damage of the photomask by correcting exactly the CD of a photoresist pattern using an correction layer with adjusted thickness. A photomask is formed by forming a plurality of light shielding patterns on a substrate(S10). A CD error region is detected from the plurality of light shielding patterns(S40). A correction layer is formed on the CD error region in order to vary the intensity of an incident light, so that the CD of a circuit pattern is corrected, wherein the circuit pattern is formed on the substrate by using the light shielding patterns(S60).