发明名称 BIT LINE BRIDGE DETECTION METHOD USING SELECTIVELY FLOATING EVEN OR ODD BIT LINES OF MEMORY DEVICE
摘要 A bit line bridge detection method is provided to detect a bit line bridge phenomenon by floating even bit lines or odd bit lines selectively, by a sense amplifier disable signal made from a sense amplifier enable signal or a bridge detection signal applied from the outside. According to a bit line bridge detection method of a memory device, a word line is enabled and a sense amplifier enable signal is enabled in response to an active command. A first voltage source for driving odd sense amplifiers connected to odd bit lines and a second voltage source and ground signals for driving even sense amplifiers connected to ground signals and even bit lines are enabled, in response to the sense amplifier enable signal. A sense amplifier disable signal is enabled after delay time from the sense amplifier enable signal. The second voltage source and the ground signals are disabled in response to the sense amplifier enable signal and an even sense amplifier selection signal, or the first voltage source and the ground signals are disabled in response to the sense amplifier disable signal and an odd sense amplifier selection signal.
申请公布号 KR100734326(B1) 申请公布日期 2007.06.26
申请号 KR20060066272 申请日期 2006.07.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JUNG HWA;LEE, JI HYUN
分类号 G11C11/4094;G11C11/4091 主分类号 G11C11/4094
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