发明名称 |
Method of manufacturing a semiconductor device having a silicidation blocking layer |
摘要 |
A silicidation blocking layer (SBL) pattern is formed on a substrate including an active region and a field region. The SBL pattern covers the field region and exposes the active region. A silicide layer is formed on the active region by reacting metal with silicon existing in the active region. An insulation layer is formed on the substrate including the silicide layer. An opening exposing the silicide layer is formed by selectively etching the insulation layer under a condition having an etching selectivity between the SBL and the insulation layer. Conductive material is filled up the opening. The field region of a substrate is sufficiently protected by the SBL pattern without any additional process so that the failure of a semiconductor device is effectively prevented because the flow of a leakage current through the field region is blocked.
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申请公布号 |
US7235481(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20040770622 |
申请日期 |
2004.02.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYEON-CHEOL |
分类号 |
H01L21/28;H01L21/336;H01L21/285;H01L21/3205;H01L21/60;H01L21/768;H01L23/52;H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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