发明名称 |
Method for generating high-contrast images of semiconductor sites via one-photon optical beam-induced current imaging and confocal reflectance microscopy |
摘要 |
A method is disclosed that permits the generation of exclusive high-contrast images of semiconductor sites in an integrated circuit sample ( 19 ). It utilizes the one-photon optical beam-induced current (1P-OBIC) image and confocal reflectance image of the sample that are generated simultaneously from one and the same excitation (probe) light beam that is focused on the sample ( 19 ). A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast image of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.
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申请公布号 |
US7235988(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20050520729 |
申请日期 |
2005.12.09 |
申请人 |
SALOMA CAESAR A;MIRANDA JELDA JAYNE C;DARIA VINCENT RICARDO M |
发明人 |
SALOMA CAESAR A.;MIRANDA JELDA JAYNE C.;DARIA VINCENT RICARDO M. |
分类号 |
G01R31/308;G01N21/956;G01R31/311;G02B21/00 |
主分类号 |
G01R31/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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