Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device

摘要

Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter "A" relating to a film property of a film of an object to be polished, a parameter "B" relating to a roughness state of a film surface, and a parameter "C" relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.