Conductor treating single-wafer type treating device and method for semi-conductor treating

摘要

A single-substrate processing apparatus ( 20 ) has a worktable ( 40 ) disposed in a process chamber ( 24 ), which accommodates a target substrate (W). The worktable ( 40 ) has a thermally conductive mount surface ( 41 ) to place the target substrate (W) thereon. The worktable ( 40 ) is provided with a flow passage ( 50 ) formed therein, in which a thermal medium flows for adjusting temperature of the target substrate (W) through the mount surface ( 41 ). The flow passage ( 50 ) is connected to a thermal medium supply system ( 54 ), which selectively supplies a cooling medium and a heating medium.