发明名称 |
Transistor-free random access memory |
摘要 |
A memory core includes a bit line and a word line. The memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to enable access to the core cell based upon a voltage applied to the word line. Methods for accessing a memory core cell also are described.
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申请公布号 |
US7236394(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20030464938 |
申请日期 |
2003.06.18 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN YI CHOU;TSAI WEN-JER;LU CHIH-YUAN |
分类号 |
G11C11/34;G11C13/00;G11C11/00;G11C16/02;H01L27/10;H01L27/112;H01L27/24 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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