发明名称 |
Semiconductor device with residual nickel from crystallization of semiconductor film |
摘要 |
It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained. |
申请公布号 |
US7235828(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20040952774 |
申请日期 |
2004.09.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;MIYANAGA AKIHARU;ZHANG HONGYONG;YAMAGUCHI NAOAKI |
分类号 |
H01L29/786;H01L21/20;H01L21/336;H01L21/77;H01L21/84 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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