| 摘要 |
A charge pump circuit is provided which outputs a high voltage by using a boosting circuit with a smaller number of stages. A diode is used to give a back-gate voltage for a MOS transistor composing the charge pump circuit, thereby minimizing a reduction in a boosted voltage due to an increase in the threshold voltage of the MOS transistor. In addition, a second MOS transistor is provided between the back gate of the MOS transistor and the ground (GND) such that in-phase clock signals are inputted to the gate of the second MOS transistor and the capacitor thereof.
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