| 摘要 |
A method for manufacturing a contact hole of a semiconductor device is provided to restrain the degradation of device characteristics by preventing the generation of polymers using a removing process on an ARC(Anti-Reflective Coating). A metal line structure(102) composed of lower barrier layer(102a), a metal line(102b) and an ARC(102c) is formed on a semiconductor substrate. An etching process is performed on the resultant structure to remove selectively an upper portion of the ARC. An interlayer dielectric is formed on the entire surface of the resultant structure. A contact mask pattern including a hole pattern with a smaller size than that of the removed upper portion of the ARC is formed on the interlayer dielectric. A contact hole for exposing partially an upper portion of the metal line to the outside is formed by performing an etching process on the resultant structure using the contact mask pattern as an etch mask.
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