发明名称 COMPOSTION FOR COATING AN OVER-LAYER ON PHOTO-RESIST AND A METHOD FOR PATTERNING SEMICONDUCTOR
摘要 Provided is a composition for forming an overlayer coating layer on photoresist, which protects a photoresist layer from amines in the air to reduce photoresist delay after exposure and pattern collapse by diffused reflection. The composition for forming an overlayer coating layer on photoresist comprises a polymer resin of the following formula(1) having a weight average molecular weight of 1000-100000, a polymer resin of the following formula(2) having a weight average molecular weight of 1000-100000, or a mixture thereof. In the formula(1), R1 is H, CH3, or CF3 and m is an integer of 1-10. In the formula(2), R2 and R3 each is independently H or a C1-10 alkyl unsubstituted or substituted with F, and n is an integer of 1-6.
申请公布号 KR20070064739(A) 申请公布日期 2007.06.22
申请号 KR20050125160 申请日期 2005.12.19
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LIM, YEON HWA
分类号 G03F7/039;G03F7/004 主分类号 G03F7/039
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