| 摘要 |
A method for fabricating an image sensor is provided to prevent the surface of a substrate from being damaged by over-etching in patterning a gate electrode by preventing ions from being implanted into a gate electrode on a photodiode formation region. An isolation layer(2) is formed in a substrate(1), and a gate oxide layer(3) and a gate electrode(4) are sequentially deposited. Ions are implanted into a part of the gate electrode by using a photoresist pattern as an ion implantation mask while the ions are not implanted into the gate electrode on a photodiode formation region. The photoresist pattern is removed, and the gate electrode is patterned to form a transfer gate(7) and a MOS transistor(5,6). The photoresist pattern can be separated from the transfer gate by an interval of 0.05~0.5 micrometer.
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