METHOD OF FORMING A SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to prevent an etch solution from penetrating into a first interlayer dielectric under a photoresist pattern by forming a silicon nitride layer between the first interlayer dielectric and the photoresist pattern. First gate structures for a cell transistor and second gate structure for a select transistor are formed on a substrate(100). The first gate structure includes a first conductive layer(104), a dielectric film(106) and a second conductive layer. The second gate structure includes a third conductive layer. A first interlayer dielectric is formed on the resultant structure to fill first and second openings between first and second gate structures. A silicon nitride layer is formed on the first interlayer dielectric. A silicon nitride pattern(132) for exposing partially the first interlayer dielectric to the outside is formed on the resultant structure by performing a photo etch process on the silicon nitride layer. A first interlayer dielectric pattern(134) is formed on the resultant structure by etching selectively the first interlayer dielectric using the silicon nitride pattern as an etch mask.