| 摘要 |
A method for forming a bit line in a semiconductor device is provided to reduce resistance of a bit line contact by forming a bit line on a lower portion of a trench oxide layer in a stacking relation with an ion implanted layer and a metal layer. A trench(T) is formed on a substrate(11), and a bottom surface of the trench is implanted with ions to form a bit line(12). A tungsten layer(13) is formed on the bit line, and an oxide layer is deposited on the tungsten layer. The oxide layer is planarized to form a trench oxide layer(15) in the trench. The bit line is formed by implanting ions into the bottom surface of the trench in energy of 50KeV.
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