| 摘要 |
A thin film transistor array substrate and a method for manufacturing the same are provided to suppress the leakage current generated in a semiconductor pattern due to backlight, by forming the semiconductor pattern to have a smaller line width than a source/drain pattern including a data line, a source electrode, and a drain electrode. A gate pattern includes a gate line(102) formed on a substrate and a gate electrode(108) connected to the gate line. A source/drain pattern includes a data line(104) crossing the gate line with a gate insulating layer interposed therebetween, a source electrode(110) connected to the data line, and a drain electrode(112) facing the source electrode. A semiconductor pattern(114) is positioned below the source/drain pattern. A line width of the semiconductor pattern is equal to or smaller than a line width of the source/drain pattern. A pixel electrode(118) is electrically connected to a portion of the drain electrode. A passivation layer is formed on the resultant substrate except the pixel electrode. |
