| 摘要 |
An evaluation method of a semiconductor device, a method for fabricating a semiconductor device, and a semiconductor wafer are provided to evaluate correlation between impurity distribution in the silicon active region under a gate electrode and an etching form of the gate electrode. A gate electrode(15) of silicon containing material is formed on a semiconductor substrate(11) through a gate insulating film(14). A source/drain electrode(12) is formed on a corresponding side of the gate electrode on the semiconductor substrate. The gate electrode is removed by applying pyrolysis hydrogen generated by pyrolysis to the semiconductor device, without removing the gate insulating film. A processed form of the gate is evaluated by observing a form of one of the gate insulating film that remains on the semiconductor substrate and a sidewall insulating film(16). |
