SEMICONDUCTOR MEMORY DEVICE HAVING COLUMN REDUNDANCY CIRCUIT FOR USE IN PAGE OPERATION

摘要

A semiconductor memory device having a column redundancy circuit for a page operation is provided to use a redundancy cell in another page block when a cell in a page block is defective. In a semiconductor memory device having a memory cell array including a plurality of memory cells, a redundancy cell array has a plurality of redundancy cells for replacing a defective memory cell in the memory cell array and is partitioned separately from the memory cell array. When the defective memory cell is replaced, the memory cell array and the redundancy cell array of the semiconductor memory device operate together. When an address designating the defective memory cell is applied, access to the redundancy cell replacing the defective memory cell is performed.