| 摘要 |
A surface-emitting type semiconductor laser and a manufacturing method thereof are provided to reduce the number of modes and to perform a high output. A surface-emitting type semiconductor laser includes a substrate(101), a first mirror(102), an active layer(103), and a second mirror(104). The substrate(101) is composed of a semiconductor substrate. The first mirror(102) is a distribution reflective multi-layered mirror. The active layer consists of a GsAs well layer and an Al0.3Ga0.7As barrier layer. The second mirror includes a current blocking layer(105), a high refraction rate area(106), and a low refraction rate area(107). The current confined layer(105) is formed by an oxide confined layer or a proton injection area. The high refraction rate area(106) is formed on a layer where the current blocking layer(105) is installed. The low refraction rate area(107) embraces the high refraction rate area(106).
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