GATE ELECTRODE OF SEMICONDUCTOR DEVICE, DUAL GATE ELECTRODE AND SEMICONDUCTOR DEVICE HAVING THE DUAL GATE

摘要

A gate electrode of a semiconductor device, a double gate electrode and the semiconductor device with the same are provided to prevent the stress applied to a gate electrode in a post heat treatment by lessening the stress between polysilicon and tungsten using a diffusion barrier composed of WN/WSix layers. A gate electrode of a semiconductor device includes a gate insulating layer(21) on a substrate(20), a polysilicon layer, a diffusion barrier, a tungsten layer. The polysilicon layer is formed on the gate insulating layer. The diffusion barrier(31a,31b) is formed on the polysilicon layer to lessen the stress applied to the polysilicon layer in a heat treatment. The tungsten layer(32) is formed on the diffusion barrier. The diffusion barrier is composed of WN/WSix layers.