发明名称 MOLDED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a high-reliability molded semiconductor device and a manufacturing method for such a semiconductor device. <P>SOLUTION: The method reduces any mismatching in the thermal expansion coefficients among module components for a semiconductor element by giving the anisotropy to the thermal expansion coefficient of a molding resin for a molded semiconductor device. In fact, the molded semiconductor device is structured in such a way that a thermal expansion coefficient in a direction parallel to an insulated substrate side of the molding resin may be different from that in a direction perpendicular to an insulated substrate side. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007158280(A) 申请公布日期 2007.06.21
申请号 JP20050355539 申请日期 2005.12.09
申请人 HITACHI LTD 发明人 INOUE KOICHI;TANBA AKIHIRO;KAMIMURA NORITAKA;SUZUKI KAZUHIRO
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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