| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an MIM capacitor capable of suppressing a leakage current and maintaining a high specific inductive capacity, and to provide a method of manufacturing the same. <P>SOLUTION: An upper layer contacting with a capacitive insulating film 17 out of the lower electrode 16 is an amorphous titanium nitride film 16B formed by, for instance, an MOCVD method. When an HfO<SB>x</SB>film to be becoming the film 17 is formed on the electrode 16 by, for instance, an ALD method, because the substrate is the amorphous titanium nitride film 16B, the HfOx film to be becoming the film 17 is formed as an amorphous dielectric film without taking over a crystalline property of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
