| 摘要 |
<P>PROBLEM TO BE SOLVED: To relatively easily control a crystallinity, and to obtain a stable and good characteristic. <P>SOLUTION: A process of forming a piezoelectric layer 70 includes a first process and a second process. In the first process, a ferroelectric material is applied on a lower electrode film 60, dried and degreased, whereby a ferroelectric precursor film is formed in a predetermined thickness. At the same time, the ferroelectric precursor film is baked to form a first ferroelectric film 71a which becomes the lowest layer of a plurality of layers of ferroelectric films. In the second process, a plurality of layers of ferroelectric films 71b, 71c and 71d are formed by repeating a process by a plurality of the number of times of forming a ferroelectric precursor film in a predetermined film thickness so that a film thickness of the ferroelectric films formed on the first ferroelectric film becomes 330[nm] or smaller, and of baking the ferroelectric precursor film by a temperature rise rate of not smaller than 100[°C/sec], thereby forming the ferroelectric films. <P>COPYRIGHT: (C)2007,JPO&INPIT |
