| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a desired via shape without producing a foreign material from an upper electrode when forming vias of the semiconductor device, and having a good opening formability of a layer insulating film. <P>SOLUTION: The manufacturing method comprises a step of forming an inter-layer wiring insulating film and a via forming resist on a first layer wiring; a step of etching the inter-layer wiring insulating film with an etching gas containing at least one of N<SB>2</SB>, O<SB>2</SB>, NH<SB>3</SB>and CO gases added to C<SB>x</SB>F<SB>y</SB>and H<SB>2</SB>gases and with the via forming resist used for a mask, thereby forming vias so as to pierce the inter-layer wiring insulating film; a step of filling the vias with the resist to form a wiring trench forming resist for a second layer wiring on the inter-layer wiring insulating film; and a step of etching the inter-layer wiring insulating film with the wiring trench forming resist for a mask down to a specified depth to form wiring trenches. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
