| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is not only available for nonvolatile memory but also can be miniaturized in a simple manufacturing process, and has a fin-type capacitor structure that allows a stable and high-capacity superimposed voltage, and to provide a method for manufacturing therefor. SOLUTION: This method forms a first insulating film 2, a first electrode 3, a second insulating film 4, a second electrode 5, a third insulating film 7, and a third electrode 9 on a semiconductor substrate 1, in this order. The first electrode 3 and the second electrode 5 are insulated by the second insulating film 4, and the second electrode 5 and the third electrode are insulated by the third insulating film 7. The third electrode 9 has a side end 9a, extending toward a semiconductor substrate 1. The side end 9a of the third electrode 9 is connected directly to a part of the surface of the first electrode 3. COPYRIGHT: (C)2007,JPO&INPIT
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