| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device employing an oxide semiconductor in a semiconductor active layer in which variation in hysteresis, shift of threshold, and increase in off current do not take place even if the semiconductor device is operated in the atmosphere, and to provide its fabrication process. SOLUTION: In a transistor comprising a gate electrode provided on a substrate, a gate insulating layer, a source electrode and a drain electrode provided sequentially on the gate electrode, and a semiconductor active layer provided between the source electrode and the drain electrode, a protective layer is provided on the surface of the semiconductor active layer excepting the parts touching the gate insulating layer, the source electrode and the drain electrode. COPYRIGHT: (C)2007,JPO&INPIT
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