| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and an electric characteristic inspection method therefor that allow execution of electric characteristic inspection even after forming a through-electrode and a rearrangement wiring. SOLUTION: The semiconductor device 100 includes a substrate 10, a first electrode pad 11 provided to the active face 10a side of the substrate 10, and at least one through-electrode 30 formed so as to penetrate through the substrate 10 and to be brought into contact with the bottom face side of the first electrode pad 11. Insulating layers 14, 17 are provided on the first electrode pad 11. A second electrode pad 20 provided directly on the first electrode pad 11 or via the rearrangement wiring 16 led out from the first electrode pad 11 is provided in the first electrode pad 11 while being exposed on the surfaces of the insulating layers 14, 17. COPYRIGHT: (C)2007,JPO&INPIT
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