| 摘要 |
A dual field plate MESFET and method of forming a dual field plate MESFET are provided. The MESFET includes a gate electrode and a drain electrode, with the gate electrode and drain electrode formed on a substrate. The MESFET further includes a gate side field plate at the gate electrode and a drain side field plate in proximity to the drain electrode and extending over a burnout improvement region in the substrate.
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