发明名称 |
Transistor structures and methods for making the same |
摘要 |
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO<SUB>2</SUB>. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO<SUB>2</SUB>, the substantially insulating ZnO or SnO<SUB>2 </SUB>being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
|
申请公布号 |
US2007141784(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20070702834 |
申请日期 |
2007.02.05 |
申请人 |
STATE OF OREGON ACTING BY AND THROUGH THE OREGON STATE BOARD OF HIGHER EDUCATION ON BEHALF OF OREGO |
发明人 |
WAGER JOHN F.III;HOFFMAN RANDY L. |
分类号 |
H01L21/336;H01L29/02;H01L29/45;H01L29/49;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|