发明名称 |
Structure and method for surface-passivated zinc-oxide based sensor |
摘要 |
A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact. |
申请公布号 |
US2007138464(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20050314881 |
申请日期 |
2005.12.20 |
申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
VAN DE WALLE CHRISTIAN G.;KIESEL PETER;SCHMIDT OLIVER |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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