摘要 |
<p>In apparatus for vapour depositing epitaxial films on substrates, a gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and monobstructive to radiant heat energy transmitted at a predetermined short wavelength. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be coated. The susceptor is heated while the walls of the reaction chamber remain cool to preclude deposition of the epitaxial film on the walls.</p> |