发明名称 Epitaxial radiation heated reactor - including a quartz reaction chamber
摘要 <p>In apparatus for vapour depositing epitaxial films on substrates, a gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and monobstructive to radiant heat energy transmitted at a predetermined short wavelength. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be coated. The susceptor is heated while the walls of the reaction chamber remain cool to preclude deposition of the epitaxial film on the walls.</p>
申请公布号 FR2114105(A5) 申请公布日期 1972.06.30
申请号 FR19700041042 申请日期 1970.11.16
申请人 APPLIED MATERIALS TECHNO 发明人
分类号 C23C16/48;(IPC1-7):01J17/00 主分类号 C23C16/48
代理机构 代理人
主权项
地址