| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element which has good data-holding characteristics. <P>SOLUTION: The storage element 10 has a configuration wherein a storage layer 3 is arranged between a first electrode 2 and a second electrode 6, an ion source layer 4 containing any element selected from Cu, Ag, and Zn is provided in contact with the storage layer 3, and the storage layer 3 is formed of one or more kinds of oxides selected from NiO, CoO, and CeO<SB>2</SB>. <P>COPYRIGHT: (C)2007,JPO&INPIT |
