| 摘要 |
PROBLEM TO BE SOLVED: To remarkably shorten the entire length of a process while suppressing an increase in propagation delay by mixedly mounting a p-channel transistor and an n-channel transistor on different semiconductor layers. SOLUTION: The n-channel transistor (p-channel transistor) is formed on a semiconductor substrate 11, an insulation film 31 having a concave portion 32 formed thereon is formed on the n-channel transistor (p-channel transistor), an amorphous semiconductor layer 33 is formed on the insulation film 31 so that the inside of the concave portion 32 is filled, and the amorphous semiconductor layer 33 is irradiated with laser to melt and crystallize the amorphous semiconductor layer 33. In this way, a substantially signal crystal semiconductor particle 34 is formed around the concave portion 32, and the p-channel transistor (n-channel transistor) is formed on the substantially single crystal semiconductor particle 34. COPYRIGHT: (C)2007,JPO&INPIT
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