发明名称 |
Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
摘要 |
To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-theta lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with the incidence angle of a laser beam, is used. The slit is disposed between the f-theta lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface by a projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.
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申请公布号 |
US2007138151(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20060636596 |
申请日期 |
2006.12.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO;OISHI HIROTADA |
分类号 |
B23K26/00;B23K26/06;H01L21/268 |
主分类号 |
B23K26/00 |
代理机构 |
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