| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent short circuit between an n-layer side surface and a p-layer side surface around an element. <P>SOLUTION: In the method of manufacturing a group III nitride-based compound semiconductor element for separating the element into individual elements with a dicing blade, a dicing work is executed so that a portion of an epitaxial layer where the dicing blade passes is partially removed by etching to form a groove, an insulation film 150 is formed on the bottom surface and side surface of the groove, the bottom surface of the groove is removed with the dicing blade, and operation is performed so that the insulation film of the side surface is not completely removed. The insulation film to be formed on the side surface of the groove is formed over the p-layer 12 to the n-layer 11 of the group III nitride-based compound semiconductor layer, and formed so that short circuit can be prevented between the p-layer 11 and the n-layer 12. <P>COPYRIGHT: (C)2007,JPO&INPIT |
