| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a DBR with no crack and high reflectance and a wide stop band. SOLUTION: The method for manufacturing a group III nitride radical distributed bragg reflector includes a step for growing a buffer layer over a substrate, a step for growing a GaN and AlN reflector film over the buffer layer, a step for growing a pair of GaN and AlN reflector films over a GaN layer, and a step for growing one or more pairs of superlattice layer. Each pair of the superlattice layers comprises a set of superlattices, constituted by two or more layers of GaN and AlN, and the GaN layer. COPYRIGHT: (C)2007,JPO&INPIT
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