| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that forms a Schottky gate electrode on a group III nitride semiconductor layer and is intended to reduce a gate leak current of the Schottky gate electrode. SOLUTION: A buffer layer 12 is first formed on a sapphire substrate 11, and a group III nitride semiconductor layer having a multilayered structure of AlGaN (electron donor layer 14)/GaN (channel layer 13) is formed thereon. Then, the layer is thermally treated in nitrogen radical to recover nitrogen electron hole defect in the surface layer of the AlGaN electron donor layer 14. Then, an Al thin film 9 is formed on the AlGaN electron donor layer 14. Then, annealing is performed on it in supervacuum. This annealing treatment allows oxygen present in an interfacial region of the AlGaN electron donor layer 14 to be taken in the thin film layer 9. Then, the thin film 9 is removed, and a Schottky electrode is quickly formed. COPYRIGHT: (C)2007,JPO&INPIT
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