NONVOLATILE MEMORY, ITS MANUFACTURING METHOD, AND ITS OPERATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory formed on a first conductivity type substrate. SOLUTION: A nonvolatile memory comprises a gate, a second conductivity type drain region, a charge storage layer, and a second conductivity type first lightly doped region. The gate is formed on the first conductivity type substrate. The second conductivity type drain region is formed at the first side part of the gate of the first conductivity type substrate. The charge storage layer is formed at the first side part of the gate of the first conductivity type substrate and between the second conductivity type drain region and the gate. The second conductivity type first lightly doped region is formed at the second side part of the gate of the first conductivity type substrate. The second side part is opposite to the first side part. COPYRIGHT: (C)2007,JPO&INPIT