| 摘要 |
Forming a wafer level chip scale flip chip package includes determining isolation requirements of an integrated circuit formed in a semi conductive substrate from package signal connections of the wafer level chip scale flip chip package. Operation may further include, based upon the integrated circuit characteristics, selecting a thickness of at least one dielectric layer isolating a top metal layer of the integrated circuit from the package signal connections of the wafer level chip scale flip chip package, determining a minimum pitch of the package signal connections of the wafer level chip scale flip chip package, and determining a maximum lateral distance from the signal pad to a servicing package signal connection of the wafer level chip scale flip chip package and determining a position of the servicing package signal connection of the wafer level chip scale flip chip package based upon the maximum lateral distance.
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