Method of forming through-wafer interconnects for vertical wafer level packaging

摘要

A substrate having target transfer regions thereon is provided. A sacrificial wafer is coated with a polymer layer with low adhesion to metals. A conductive layer is coated on the polymer layer and covered with a photoresist layer which is patterned to provide openings to the conductive layer. Thin film and passive or active device structures are formed on the conductive layer within the openings. The substrate is bonded to the sacrificial wafer wherein the thin film and passive or active device structures and the photoresist layer provide the bonding and wherein the thin film and passive or active device structures contact the substrate at the target transfer regions. The photoresist is stripped in a high frequency agitation bath wherein the photoresist separates from the sacrificial wafer and wherein the thin film and passive or active device structures separate from the polymer layer to complete transfer bonding.