摘要 |
Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.
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