| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for pretreating epitaxial layers permitting a reduction in variations in the measured values, a method for measuring a specific resistance of the epitaxial layer, and an apparatus for measuring the specific resistance of wafers. SOLUTION: A method for pretreating epitaxial layers is for measuring the specific resistance of the epitaxial layer, by making a metal electrode contact with the epitaxial layer formed on a semiconductor wafer. There is adopted the pretreating method of the epitaxial layers, characterized by applying a carbon-containing compound to the epitaxial layer and irradiating with ultraviolet light in an oxygen-containing atmosphere. COPYRIGHT: (C)2007,JPO&INPIT |
