| 摘要 |
PROBLEM TO BE SOLVED: To achieve a resist developing device using a supercritical carbon dioxide capable of being used in cooperation as a developing medium without damaging the throughputs of exposure systems by a lithographic process for a semiconductor fine working. SOLUTION: A method for efficiently manufacturing a semiconductor integrated circuit is obtained by using the resist developing device with a developing tank 4 housing a cassette 5 capable of fixing a plurality of resist-coated substrates using supercritical carbon dioxide as the developing medium. The throughput of the exposure system can further be maintained effectively, by exchanging the cassette fixing the substrates before a development and the cassette fixing the substrates after the development in this case. COPYRIGHT: (C)2007,JPO&INPIT |
