| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method for suppressing any reaction as the factor of the generation of a watermark, and for preventing the generation of the watermark. SOLUTION: After the end of chemical treatment process to a wafer W, a shielding board 3 is descended from an isolate position to a proximity position. Then, nitrogen gas is supplied from a nitrogen gas channel 35 to the surface of the wafer W, and acid liquid is supplied from a surface side rinse nozzle 34 to the center of the surface of the wafer W. After receiving a centrifugal force according to the rotation of the wafer W, the acid liquid supplied to the surface of the wafer W is made to flow from the center to peripheral edge on the surface of the wafer W. Thus, it is possible to quickly convey the acid liquid to the whole surface of the wafer W, and to wash out chemical stuck to the surface of the wafer W by the acid liquid. In this rinse treatment process, the dioxidized acid liquid is used for suppressing any reaction as the factor of the generation of a watermark. COPYRIGHT: (C)2007,JPO&INPIT
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